SI4368DY |
RFQ for SI4368DY |
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| Product | Manufacturers | Pack | D/C |
| SI4368DY | - | SOP-8 | 04+ |
Typical Application |
Features |
| · Low-Side DC/DC Conversion− Notebook, Server, VRM Module· Fixed Telecom | · Extremely Low Qgd WFET Technology for Switching Losses Improvement· TrenchFET® Gen II Power MOSFET· 100% Rg Tested |
| Parameter | Symbol | 5 secs | Steady State | Unit | |
| Drain-Source Voltage | VDS | 30 | V | ||
| Gate-Source Voltage | VGS | ±12 | |||
| Continuous Drain Current (TJ = 150)a | TA = 25 | ID | 25 | 17 | A |
| TA = 70 | 20 | 13 | |||
| Pulsed Drain Current(10 s Pulse Width) | IDM | 70 | |||
| Continuous Source Current (Diode Conduction)a | IS | 2.9 | 1.3 | A | |
| Maximum Power Dissipationa | TA = 25 | PD | 3.5 | 1.6 | W |
| TA = 70 | 2.2 | 1 | |||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 to 150 | |||